2SK1620 Datasheet, PDF (3/8 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1620(L), 2SK1620(S)
Main Characteristics
Power vs. Temperature Derating
60
40
20
0
50
100
150
Case Temperature T_C (°C)
Typical Output Characteristics
20 _{15 V}
16
10 V
8V
Pulse Test
6V
12
5.5 V
8
5V
4
V_GS = 4.5 V
0
4
8
12 16 20
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
5
Pulse Test
4
3
2
I_D = 10 A
1
5A
2A
0
4
8
12 16
20
Gate to Source Voltage V_GS (V)
Rev.2.00 Sep 07, 2005 page 3 of 7
Maximum Safe Operation Area
100
1001_µ^0sµ_s
10
1.0
Operation in this area is
limited by R_{DS (on)}
Ta = 25°C
0.1
1
10
100
1,000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
20
–25°C
16 _{VDS = 10 V}
Pulse Test
75°C
T_C = 25°C
12
8
4
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State
Resistance vs. Drain Current
0.5
0.2
V_GS = 10 V
0.1
15 V
0.05
0.02 ^{Pulse Test}
0.01
0.005
0.5 1.0 2
5 10 20 50
Drain Current I_D (A)