2SK1526 Datasheet, PDF (4/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1526, 2SK1527
Static Drain to Source on State
Resistance vs. Temperature
0.5
0.4
V_GS = 10 V
Pulse Test
0.3
I_D = 50 A
20 A
0.2
10 A
0.1
0
–40 0
40 80 120 160
Case Temperature T_C (°C)
Body to Drain Diode Reverse
Recovery Time
5,000
2,000
di/dt = 100 A/µs, V_GS = 0
Pulse Test
1,000
500
200
100
50
12
5 10 20 50 100
Reverse Drain Current I_DR (A)
1,000
800
600
Dynamic Input Characteristics
V_DD = 100 V
250 V
400 V
V_GS
20
16
I_D = 30 A
12
400 ^VDS
8
200
V_DD = 400 V
4
250 V
100 V
0
0
80 160 240 320 400
Gate Charge Qg (nc)
Forward Transfer Admittance
vs. Drain Current
100
V_DS = 10 V
50 Pulse Test
20
T_C = –25°C
25°C
10
75°C
5
2
1
0.5 1 2
5 10 20 50
Drain Current I_D (A)
10,000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
1,000
Coss
100
V_GS = 0
f = 1 MHz
Crss
10
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
1,000
500
Switching Characteristics
t_{d (off)}
200
t_f
100
t_r
t_{d (on)}
50
20 ^VGS ^{= 10 V, V}DD ^{= 30 V}
PW = 2 µs, duty ≤ 1 %
10
0.5 1 2
5 10 20 50
Drain Current I_D (A)
Rev.2.00 Sep 07, 2005 page 4 of 6