2SK1404 Datasheet, PDF (4/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1404
Static Drain to Source on State Resistance
vs. Temperature
5
V_GS = 10 V
Pulse Test
4
3
I_D = 5 A
2
2A
1
1A
0
–40 0
40 80 120 160
Case Temperature Tc (°C)
1000
Body to Drain Diode Reverse
Recovery Time
500
200
100
50
20
10
0.05 0.1 0.2
di / dt = 50 A / µs
V_GS = 0, Ta = 25°C
Pulse Test
0.5 1 2
5
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
1000
20
I_D = 5 A
800
V_DD = 100 V
600
250 V
400 V
400
V_DS
16
12
V_GS
8
200
0
0
V_DD = 400 V
250 V
100 V
8
16 24 32
Gate Charge Qg (nc)
4
0
40
Forward Transfer Admittance vs.
Drain Current
10
V_DS = 20 V
5 ^{Pulse Test}
2
Tc = –25°C
1
0.5
25°C
75°C
0.2
0.1
0.05 0.1 0.2 0.5 1 2
5
Drain Current I_D (A)
Typical Capacitance vs.
Drain to Source Voltage
10000
V_GS = 0
f = 1 MHz
Ciss
1000
Coss
100
Crss
10
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
Switching Characteristics
500
V_GS = 10 V, V_DD = 30 V
PW = 2 µs, duty ≤ 1 %
200
td(off)
100
tf
50
tr
20
td(on)
10
5
0.1 0.2 0.5 1 2
5 10
Drain Current I_D (A)
Rev.3.00 May 15, 2006 page 4 of 6