2SK1404 Datasheet, PDF (3/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1404
Main Characteristics
Power vs. Temperature Derating
60
40
20
0
0
50
100
150
Case Temperature Tc (°C)
Typical Output Characteristics
10
10 V
6V
8
5V
Pulse Test
4.5 V
6
4
4V
2
V_GS = 3 V
3.5 V
0
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
10
Pulse Test
8
I_D = 5 A
6
4
2A
2
1A
0
0
4
8
12 16 20
Gate to Source Voltage V_GS (V)
Rev.3.00 May 15, 2006 page 3 of 6
Maximum Safe Operation Area
50
20
10
5
100
10
µ_s
µ_s
2
1
0.5
0.2
DC
Operation
Operation in
this area is
(Tc
=
25°C)
0.1 ^{limited by RDS (on)}
Ta = 25°C
0.05
1 3 10 30 100 300
1000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
10
V_DS = 20 V
Pulse Test
8
6
4
Tc = 75°C
2
25°C
–25°C
0
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
50
Pulse Test
20
10
5
V_GS = 10 V
2
1
15 V
0.5
0.2
0.5 1 2
5 10 20
Drain Current I_D (A)