2SK1400 Datasheet, PDF (4/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1400, 2SK1400A
Static Drain to Source on State
Resistance vs. Temperature
2.0
Pulse Test
1.6 _{VGS = 10 V}
1.2
0.8
10 A
5A
2A
0.4
0
–40 0
40 80 120 160
Case Temperature T_C (°C)
Body to Drain Diode Reverse
Recovery Time
500
200
100
50
20
10
di/dt = 50 A/µs, V_GS = 0
Ta = 25°C
Pulse Test
5
0.2 0.5 1 2
5
10 20
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
500
20
400
V_DD = 50 V
16
100 V
200 V
300
V_GS
12
200 ^VDS
8
100
200 V
I_D = 7 A
4
100 V
V_DD = 50 V
0
0
8
16 24 32 40
Gate Charge Qg (nc)
Forward Transfer Admittance
vs. Drain Current
50
V_DS = 20 V
Pulse Test
20
10
–25°C
5
T_C = 25°C
75°C
2
1
0.5
0.1 0.2 0.5 1 2
5 10
Drain Current I_D (A)
10,000
Static Drain-Source on State
Resistance vs. Drain Current
Ciss
1,000
Coss
100
Crss
V_GS = 0 V
f = 1 MHz
10
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
Switching Characteristics
500
V_GS = 10 V, V_DD = 30 V
PW = 2 µs, duty ≤ 1 %
200
100
t_{d (off)}
50
t_f
20
t_r
t_{d (on)}
10
5
0.1 0.2 0.5 1 2
5 10
Drain Current I_D (A)
Rev.2.00 Sep 07, 2005 page 4 of 6