2SK1400 Datasheet, PDF (3/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1400, 2SK1400A
Main Characteristics
Power vs. Temperature Derating
60
40
20
0
50
100
150
Case Temperature T_C (°C)
Typical Output Characteristics
10
15 V
5.5 V
8
6V
10 V
Pulse Test
5V
6
4
4.5 V
2
4V
V_GS = 3.5 V
0
4
8
12 16 20
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
10
Pulse Test
8
I_D = 10 A
6
4
5A
2
2A
0
4
8
12 16 20
Gate to Source Voltage V_GS (V)
Rev.2.00 Sep 07, 2005 page 3 of 6
Maximum Safe Operation Area
50
20
10
5
2
1
PW
=
10
1
ms
10
100 _µs
ms
(1 _Shot)
µ_s
0.5
0.2
0.1
Ta = 25°C
0.05
1 3 10
2SK1400
2SK1400A
30 100 300 1,000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
10
8
V_DS = 20 V
Pulse Test
6
4
75°C
Ta = 25°C
2
–25°C
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State
Resistance vs. Drain Current
5
Pulse Test
2
V_GS = 10 V
1
15 V
0.5
0.2
0.1
0.05
0.5 1.0 2
5 10 20 50
Drain Current I_D (A)