2SK1340 Datasheet, PDF (4/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1340
Static Drain to Source on State
Resistance vs. Temperature
10
V_GS = 10 V
Pulse Test
8
6
I_D = 5 A
2A
4
1A
2
0
–40 0
40 80 120 160
Case Temperature T_C (°C)
Body to Drain Diode Reverse
Recovery Time
5,000
2,000
di/dt = 100 A/µs, Ta = 25°C
V_GS = 0
Pulse Test
1,000
500
200
100
50
0.1 0.2 0.5 1 2
5 10
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
1,000
800
V_DD = 250 V
400 V
600 V
600
V_DS
V_GS
20
16
I_D = 5 A
12
400
8
600 V
200
400 V
4
V_DD = 250 V
0
0
20 40 60 80 100
Gate Charge Qg (nc)
Forward Transfer Admittance
vs. Drain Current
10
5
–25°C
Tc = 25°C
75°C
2
1
0.5
0.2
V_DS = 20 V
Pulse Test
0.1
0.05 0.1 0.2 0.5 1 2
5
Drain Current I_D (A)
Typical Capacitance vs.
Drain to Source Voltage
10,000
V_GS = 0
f = 1 MHz
1,000
Ciss
Coss
100
Crss
10
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
Switching Characteristics
500
200
td(off)
100
tf
50
tr
20
td(on)
10 _{VGS = 10 V, VDD = 30 V}
PW = 2 µs, duty ≤ 1 %
5
0.1 0.2 0.5 1 2
5 10
Drain Current I_D (A)
Rev.3.00 May 15, 2006 page 4 of 6