2SK1340 Datasheet, PDF (2/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1340
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at T_C = 25°C
Electrical Characteristics
Symbol
V_DSS
V_GSS
I_D
I_D(pulse)*1
I_DR
Pch^*2
Tch
Tstg
Item
Symbol Min
Typ
Drain to source breakdown voltage V_(BR)DSS 900
—
Gate to source breakdown voltage V_(BR)GSS ±30
—
Gate to source leak current
I_GSS
—
—
Zero gate voltage drain current
I_DSS
—
—
Gate to source cutoff voltage
V_GS(off)
2.0
—
Static drain to source on state
resistance
R_DS(on)
—
3.0
Forward transfer admittance
|y_fs|
2.0
3.2
Input capacitance
Ciss
—
740
Output capacitance
Coss
—
305
Reverse transfer capacitance
Crss
—
150
Turn-on delay time
t_d(on)
—
15
Rise time
t_r
—
70
Turn-off delay time
t_d(off)
—
90
Fall time
t_f
—
90
Body to drain diode forward voltage V_DF
—
0.9
Body to drain diode reverse recovery trr
time
—
900
Note: 3. Pulse test
Ratings
900
±30
5
12
5
100
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Max
—
—
±10
250
3.0
4.0
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
(Ta = 25°C)
Test conditions
I_D = 10 mA, V_GS = 0
I_G = ±100 µA, V_DS = 0
V_GS = ±25 V, V_DS = 0
V_DS = 720 V, V_GS = 0
I_D = 1 mA, V_DS = 10 V
I_D = 3 A, V_GS = 10 V *³
S I_D = 3 A, V_DS = 20 V *³
pF V_DS = 10 V, V_GS = 0,
pF ^{f = 1 MHz}
pF
ns I_D = 3 A, V_GS = 10 V,
ns ^RL ^{= 10 Ω}
ns
ns
V I_F = 5 A, V_GS = 0
ns I_F = 5 A, V_GS = 0,
di_F/dt = 100 A/µs
Rev.3.00 May 15, 2006 page 2 of 6