2SK1337 Datasheet, PDF (4/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1337
Static Drain to Source on State
Resistance vs. Temperature
10
Pulse Test
8
I_D = 0.5 A
0.2 A
0.1 A
6
V_GS = 4 V
0.2 A
4
0.5 A ^{0.1 A}
V_GS = 10 V
2
0
–40 0
40 80 120 160
Case Temperature T_C (°C)
Body to Drain Diode Reverse
Recovery Time
500
di/dt = 50 A/µs, Ta = 25°C
200 ^{VGS = 0}
100
50
20
10
5
0.02 0.05 0.1 0.2 0.5 1
2
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
200
20
V_DD = 25 V
160
50 V
16
80 V
120
80 ^VDS
40
0
0
0.8
12
V_GS
8
I_D = 0.3 A
V_DD = 80 V
4
50 V
25 V
0
1.6 2.4 3.2 4.0
Gate Charge Qg (nc)
Forward Transfer Admittance
vs. Drain Current
5
V_DS = 10 V
2 ^{Pulse Test}
1
T_C = –25°C
25°C
0.5
75°C
0.2
0.1
0.05
0.02 0.05 0.1 0.2 0.5 1 2
Drain Current I_D (A)
Typical Capacitance vs.
Drain to Source Voltage
1,000
V_GS = 0
f = 1 MHz
100
Ciss
10
Coss
Crss
1
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
Switching Characteristics
50
20
t_{d (off)}
10
t_f
5
t_r
2
t_{d (on)}
1
0.5
0.02
V_GS = 10 V
V_DD
=•
•
30
V
PW = 2 µs, duty < 0.1%
0.05 0.1 0.2 0.5 1 2
Drain Current I_D (A)
Rev.2.00 Sep 07, 2005 page 4 of 6