2SK1337 Datasheet, PDF (3/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1337
Main Characteristics
Power vs. Temperature Derating
600
400
200
0
50
100
150
Ambient Temperature Ta (°C)
Typical Output Characteristics
1.0
10 V 5 V
Pulse Test
0.8
V_GS = 4 V
0.6
3.5 V
0.4
3V
0.2
2.5 V
0
4
8
12 16 20
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
5
Pulse Test
4
3
2
I_D = 0.5 A
1
0.2 A
0.1 A
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Rev.2.00 Sep 07, 2005 page 3 of 6
Maximum Safe Operation Area
5
2
1
0.5
0.2
0.1
0.05
PW _{= 101mm1s0s(0110µssh}^µ_ost)
0.02
0.01 _{Ta = 25°C}
0.005
0.1 0.3 1 3 10 30 100
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
1.0
0.8
–25°C
T_C = 25°C
75°C
V_DS = 10 V
Pulse Test
0.6
0.4
0.2
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State
Resistance vs. Drain Current
50
Pulse Test
20
10
V_GS = 4 V
5
10 V
2
1
0.5
0.02 0.05 0.1 0.2 0.5 1 2
Drain Current I_D (A)