2SK1336 Datasheet, PDF (4/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1336
Static Drain to Source on State
Resistance vs. Temperature
5
Pulse Test
4
I_D = 0.5 A ^{0.2 A}
3
V_GS = 4 V
2
1
10 V
0.1 A
0.5 A
0.2 A
0.1 A
0
–40 0
40 80 120 160
Case Temperature T_C (°C)
Body to Drain Diode Reverse
Recovery Time
1,000
500
di/dt = 50 A/µs
V_GS = 0, Ta = 25°C
Pulse Test
200
100
50
20
10
0.05 0.1 0.2 0.5 1 2
5
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
100
20
80
V_DD = 10 V
25 V
16
50 V
60
V_DS
12
V_GS
40
8
20
V_DD = 50 V
I_D = 0.3 A
4
25 V
10 V
0
0
0
0.8 1.6 2.4 3.2 4.0
Gate Charge Qg (nc)
Forward Transfer Admittance
vs. Drain Current
5
V_DS = 10 V
2 ^{Pulse Test}
1
25°C
0.5
–25°C
0.2
T_C = 75°C
0.1
0.05
0.02 0.05 0.1 0.2 0.5 1 2
Drain Current I_D (A)
Typical Capacitance vs.
Drain to Source Voltage
100
Ciss
Coss
10
Crss
1
V_GS = 0
f = 1 MHz
0.1
0
10 20 30 40
50
Drain to Source Voltage V_DS (V)
Switching Characteristics
100
50
t_f
20
V_GS = 10 V, PW _.= 2 µs
duty < 1%, V_DD =. 30 V
t_{d (off)}
10
5 _tr
2
t_{d (on)}
1
0.05 0.1 0.2 0.5 1 2
5
Drain Current I_D (A)
Rev.2.00 Sep 07, 2005 page 4 of 6