2SK1336 Datasheet, PDF (3/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1336
Main Characteristics
Power vs. Temperature Derating
600
400
200
0
50
100
150
Ambient Temperature Ta (°C)
Typical Output Characteristics
1.0 _{10 V 6 V}
Pulse Test
4V
0.8
3.5 V
0.6
3V
0.4
2.5 V
0.2
V_GS = 2 V
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
1.0
Pulse Test
0.8
0.5 A
0.6
0.4
0.2 A
0.2
I_D = 0.1 A
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Rev.2.00 Sep 07, 2005 page 3 of 6
Maximum Safe Operation Area
5
3
1
0.3
OpiserlaimtioitnedinbtyhiRs
area
DS ^(on)
0.1
10 _µs
1 _ms
0.03
Ta = 25°C
0.01
0.005
0.1 0.3 1 3 10 30 100
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
1.0
V_DS = 10 V
Pulse Test
0.8
0.6
0.4
0.2
25°C
T_C = 75°C
–25°C
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State
Resistance vs. Drain Current
50
Pulse Test
20
10
5
2
V_GS = 4 V
1
10 V
0.5
0.05 0.1 0.2 0.5 1 2
5
Drain Current I_D (A)