2SK1317 Datasheet, PDF (4/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1317
Static Drain to Source on State
Resistance vs. Temperature
20
16
V_GS = 15 V
Pulse Test
I_D = 2 A
0.5 A, 1 A
12
8
4
0
–40 0
40 80 120 160
Case Temperature T_C (°C)
5,000
Body to Drain Diode Reverse
Recovery Time
2,000
1,000
500
200 ^{di/dt = 100 A/µs, Ta = 25°C}
V_GS = 0
100 ^{Pulse Test}
50
0.05 0.1 0.2 0.5 1.0 2
5
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
1,000
20
V_DD = 250 V
800
400 V
16
600 V
600
V_DS
V_GS
12
400
8
V_DD = 600 V
200
400 V
4
250 V
I_D = 2.5 A
0
0
20 40 60 80 100
Gate Charge Qg (nc)
Forward Transfer Admittance
vs. Drain Current
10
V_DS = 20 V
5 _{Pulse Test}
2
–25°C
Ta = 25°C
1.0
75°C
0.5
0.2
0.1
0.05 0.1 0.2 0.5 1.0 2
5
Drain Current I_D (A)
10,000
1,000
Typical Capacitance vs.
Drain to Source Voltage
V_GS = 0
f = 1 MHz
Ciss
100
Coss
Crss
10
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
1,000
500
Switching Characteristics
V_GS = 10 V
V_DD
=•
•
30
V
PW = 2 µs, duty < 1%
t_{d (off)}
200
100
t_f
50
t_r
20
t_{d (on)}
10
0.05 0.1 0.2 0.5 1.0 2
5
Drain Current I_D (A)
Rev.2.00 Sep 07, 2005 page 4 of 6