2SK1317 Datasheet, PDF (1/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1317
Silicon N Channel MOS FET
Application
High speed power switching
Features
• High breakdown voltage V_DSS = 1500 V
• High speed switching
• Low drive current
• No secondary breakdown
• Suitable for switching regulator, DC-DC converter and motor driver
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
G
1
2
3
REJ03G0929-0200
(Previous: ADE-208-1268)
Rev.2.00
Sep 07, 2005
D
1. Gate
2. Drain
(Flange)
3. Source
S
Rev.2.00 Sep 07, 2005 page 1 of 6