2SK1303 Datasheet, PDF (4/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1303
Static Drain to Source on State
Resistance vs. Temperature
0.20
Pulse Test
0.16
0.12
0.08
0.04
I_D = 20 A
10 A
V_GS = 4 V
50 A
20 A
10 A
V_GS = 10 V
0
–40 0
40 80 120 160
Case Temperature T_C (°C)
5,000
2,000
1,000
Body to Drain Diode Reverse
Recovery Time
di/dt = 50 A/µs, Ta = 25°C
V_GS = 0
Pulse Test
500
200
100
50
0.5 1.0 2
5 10 20 50
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
100
20
80 V_DS
V_DD = 25 V
16
50 V
80 V
60
12
V_DD = 80 V
V_GS
40
8
20
4
50 V
I_D = 30 A
25 V
0
0
20 40 60 80 100
Gate Charge Qg (nc)
Forward Transfer Admittance
vs. Drain Current
50
20
–25°C
10
T_C = 25°C
5
75°C
2
V_GS = 10 V
1.0
Pulse Test
0.5 1.0 2
5 10 20 50
Drain Current I_D (A)
10,000
1,000
Typical Capacitance vs.
Drain to Source Voltage
V_GS = 0
f = 1 MHz
Ciss
Coss
Crss
100
10
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
1,000
500
Switching Characteristics
td _(off)
200
tf
100
50
tr
V_GS = 10 V, V_DD =.. 30 V
PW = 2 µs, duty < 1%
20
td _(on)
10
0.5 1.0 2
5 10 20
50
Drain Current I_D (A)
Rev.2.00 Sep 07, 2005 page 4 of 6