2SK1303 Datasheet, PDF (3/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1303
Main Characteristics
Power vs. Temperature Derating
120
80
40
0
50
100
150
Case Temperature T_C (°C)
Typical Output Characteristics
50
10 V
5V
7V
40
4V
Pulse Test
3.5 V
30
20
3V
10
V_GS = 2.5 V
0
4
8
12 16 20
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
5
Pulse Test
4
3
I_D = 50 A
2
20 A
1
10 A
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Rev.2.00 Sep 07, 2005 page 3 of 6
Maximum Safe Operation Area
500
200
100
50
20
10
5
2
1.0
Opera^Dti^Con^OPpi^Wn^ert^a=h^ti1i^os⁰ⁿA^m(Tr^Cse¹⁽a^{=1002S51hµ°0osCtµ)) s}
is Limited by R_{DS (on)}
Ta = 25°C
0.5
1 3 10 30 100 300 1,000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
50
V_DS = 10 V
Pulse Test
40
30
20
75°C
10
T_C = 25°C
–25 C
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State
Resistance vs. Drain Current
0.5
Pulse Test
0.2
V_GS = 4 V
10 V
0.1
0.05
0.02
0.01
0.005
2
5 10 20 50 100 200
Drain Current I_D (A)