2SK1298 Datasheet, PDF (4/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1298
Static Drain to Source on State
Resistance vs. Temperature
0.05
Pulse Test
0.04
0.03
I_D = 50 A
10 A, 20 A
V_GS = 4 V
0.02
0.01
V_GS = 10 V
50 A
10 A, 20 A
0
–40
0
40
80 120 160
Case Temperature T_C (°C)
Body to Drain Diode Reverse
Recovery Time
500
200
100
50
20
di/dt = 50 A/µs, Ta = 25°C
10
V_GS = 0
Pulse Test
5
0.5 1.0 2
5 10 20 50
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
100
20
80
16
V_DD = 10 V
25 V
60
50 V
12
V_DS
40
50 V
V_GS
8
20
4
25 V
I_D = 40 A
V_DD = 10 V
0
0
40 80 120 160 200
Gate Charge Qg (nc)
Forward Transfer Admittance
vs. Drain Current
50
20
–25°C
T_C = 25°C
10
75°C
5
2
V_DS = 10 V
1.0
Pulse Test
0.5 1.0 2
5 10 20 50
Drain Current I_D (A)
10000
1000
100
Typical Capacitance vs.
Drain to Source Voltage
Ciss
V_GS = 0
f = 1 MHz
Coss
Crss
10
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
1000
500
Switching Characteristics
td(off)
tf
200
100
tr
50
20
10
0.5
td(on)
V_GS = 10 V
V_DD
=•
•
30
V
PW = 2 µs, duty < 1 %
1.0 2
5 10 20 50
Drain Current I_D (A)
Rev.2.00 Sep 07, 2005 page 4 of 6