2SK1298 Datasheet, PDF (3/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1298
Main Characteristics
Power vs. Temperature Derating
60
40
20
0
50
100
150
Case Temperature T_C (°C)
Typical Output Characteristics
100 _{10 V}
8V
80
4.5 V
5V
Pulse Test
4V
60
3.5 V
40
3V
20
V_GS = 2.5 V
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
2.0
Pulse Test
1.6
1.2
0.8
I_D = 50 A
0.4
20 A
10 A
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Rev.2.00 Sep 07, 2005 page 3 of 6
Maximum Safe Operation Area
500
200
10 _µs
100
50
1 _ms
20
10
5
2
1.0
DC
Operation in
is limited by
Operation
this area
R_{DS (on)}
(TC
=
25_°C)
Ta = 25°C
0.5
0.1 0.3 1.0 3 10 30 100
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
100
V_DS = 10 V
80
Pulse Test
60
40
75°C
20
T_C = 25°C
–25°C
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State
Resistance vs. Drain Current
0.5
Pulse Test
0.2
0.1
0.05
0.02
0.01
0.005
2
V_GS = 4 V
10 V
5 10 20 50 100 200
Drain Current I_D (A)