2SK1215 Datasheet, PDF (4/6 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1215
Reverse Transfer Capacitance vs.
Drain to Source Voltage
0.5
V_GS = 0
f = 1 MHz
0.2
0.1
0.05
0.02
0.01
0.5 1.0 2
5 10 20
Drain to Source Voltage V_DS (V)
Power Gain, Noise Figure vs.
Drain to Source Voltage
35
PG
30
25
f = 100 MHz
20
6
15
4
NF
10
2
5
0
0 2 4 6 8 10 12
Drain to Source Voltage V_DS (V)
Output Capacitance vs.
Drain to Source Voltage
20
V_GS = 0
f = 1 MHz
10
5
2
1.0
0.5
0.5 1.0 2
5 10 20
Drain to Source Voltage V_DS (V)
Rev.2.00 Aug 10, 2005 page 4 of 5