2SK1215 Datasheet, PDF (3/6 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1215
Maximum Channel Dissipation Curve
600
400
200
0
50
100
150
Ambient Temperature Ta (°C)
Typical Transfer Characteristics
10.0
V_DS = 10 V
8.0
F
6.0
E
4.0
2.0
0
–2.0 –1.6 –1.2 –0.8 –0.4 0
Gate to Source Voltage V_GS (V)
Forward Transfer Admittance vs.
Drain Current
100
V_DS = 10 V
50
f = 1 kHz
20
10
5
2
1
0.2 0.5 1.0 2
5 10 20
Drain Current I_D (mA)
Typical Output Characteristics
10
V_GS ^{= 0 V}
8
–0.1
6
–0.2
–0.3
4
–0.4
–0.5
2
–0.6
–0.7
–0.8
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Forward Transfer Admittance vs.
Drain to Source Voltage
20
16
12
8
4
V_GS = 0
f = 1 kHz
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Input Capacitance vs.
Drain to Source Voltage
20
V_GS = 0
f = 1 MHz
10
5
2
1.0
0.5
0.5 1.0 2
5 10 20
Drain to Source Voltage V_DS (V)
Rev.2.00 Aug 10, 2005 page 3 of 5