2SJ399 Datasheet, PDF (4/6 Pages) Hitachi Semiconductor – Silicon P-Channel MOS FET

2SJ399
Static Drain to Source on State Resistance
vs. Temperature
5
4
I D = –0.2 A _{–0.05 A}
–0.1 A
3
V_GS = –4 V
I D = –0.2 A
2
–0.1 A
–0.05 A
1
V_GS = –10 V
0
–40
0
40 80 120 160
Case Temperature Tc (°C)
Typical Capacitance vs.
Drain to Source Voltage
100
50
20
Coss
10
5
2
Ciss
1
0.5
0.2
0.1
0
Crss
VGS = 0
f = 1 MHz
–10 –20 –30 –40 –50
Drain to Source Voltage V _DS (V)
Reverse Drain Current vs.
Source to Drain Voltage
–0.5
Pulse Test
–0.4
–10 V
–0.3
–0.2
–5 V
V_GS = 0
–0.1
0
–0.4 –0.8 –1.2 –1.6 –2.0
Source to Drain Voltage V _SD (V)
Forward Transfer Admittance vs.
Drain Current
1
0.5
Ta = –25 °C
0.2
75 °C
0.1
25 °C
0.05
0.02
V _DS = –10 V
Pulse Test
0.01
–0.01 –0.02 –0.05 –0.1 –0.2 –0.5 –1
Drain Current I _D (A)
10000
5000
2000
1000
500
Switching Characteristics
tf
t _d(off)
tr
t _d(on)
200
100
–0.1
V_GS = –10 V
PW = 5 µs
–0.2 –0.5 –1 –2
–5
Drain Current I _D (A)
Rev.2.00, Apr.05.2004, page 4 of 5