2SJ399 Datasheet, PDF (1/6 Pages) Hitachi Semiconductor – Silicon P-Channel MOS FET

2SJ399
Silicon P-Channel MOS FET
Application
Low frequency power switching
Features
• Low on-resistance
• Small package
• Low drive current
• 4 V gate drive device can be driven from 5 V source
• Suitable for low signal load switch.
Outline
MPAK
Note: Marking is “ZF–”
3
1
2
D
G
1. Source
2. Gate
3. Drain
S
REJ03G0193-0200Z
(Previous ADE-208-267 (Z) )
Rev.2.00
Apr.05.2004
Rev.2.00, Apr.05.2004, page 1 of 5