STB25NM60NX Datasheet, PDF (3/18 Pages) STMicroelectronics – N-channel 600 V, 0.130 Ω , 21 A, MDmesh™ II Power MOSFET TO-220, TO-220FP, I2PAK, D2PAK, TO-247

STB25NM60Nx - STF25NM60N - STP25NM60N - STW25NM60N
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
TO-220 - I²PAK
D²PAK - TO-247
TO-220FP
Unit
V_DS Drain-source voltage (V_GS = 0)
V_GS Gate- source voltage
I_D Drain current (continuous) at T_C = 25 °C
I_D Drain current (continuous) at T_C = 100 °C
I_DM ⁽²⁾ Drain current (pulsed)
P_TOT Total dissipation at T_C = 25 °C
V_ISO
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t=1 s;T_C=25 °C)
dv/dt ⁽³⁾ Peak diode recovery voltage slope
T_stg Storage temperature
T_j Max. operating junction temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I_SD ≤ 21 A, di/dt ≤ 400 A/µs, V_DD =80% V_(BR)DSS
600
±25
21
13
84
160
21 ⁽¹⁾
13 ⁽¹⁾
84 ⁽¹⁾
40
--
2500
15
–55 to 150
150
V
V
A
A
A
W
V
V/ns
°C
°C
Table 3. Thermal data
Symbol
Parameter
R_thj-case
Thermal resistance junction-case
max
R_thj-pcb
Thermal resistance junction-pcb
max
R_thj-amb
Thermal resistance junction-
ambient max
T_l
Maximum lead temperature for
soldering purpose
Value
Unit
TO-220 I²PAK D²PAK TO-247 TO-220FP
0.78
3.1 °C/W
--
--
30
--
--
62.5
--
50
62.5 °C/W
300
°C
Table 4. Avalanche characteristics
Symbol
Parameter
Avalanche current, repetitive or not-repetitive
I_{AR (pulse width limited by Tj Max)}
Single pulse avalanche energy
E_{AS (starting TJ = 25 °C, ID=IAR, VDD = 50 V)}
Value
10
850
Unit
A
mJ
3/18