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STB25NM60NX Datasheet, PDF (1/18 Pages) STMicroelectronics – N-channel 600 V, 0.130 Ω , 21 A, MDmesh™ II Power MOSFET TO-220, TO-220FP, I2PAK, D2PAK, TO-247
STB25NM60Nx - STF25NM60N
STP25NM60N - STW25NM60N
N-channel 600 V, 0.130 Ω , 21 A, MDmesh™ II Power MOSFET
TO-220, TO-220FP, I2PAK, D2PAK, TO-247
Features
Type
VDSS
(@Tjmax)
RDS(on)
max
ID
STB25NM60N
STB25NM60N-1
STF25NM60N
STP25NM60N
STW25NM60N
650 V
650 V
650 V
650 V
650 V
< 0.160 Ω
< 0.160 Ω
< 0.160 Ω
< 0.160 Ω
< 0.160 Ω
21 A
21 A
21 A(1)
21 A
21 A
1. Limited only by maximum temperature allowed
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
■ Switching applications
Description
This series of devices is realized with the second
generation of MDmesh™ technology. This
revolutionary MOSFET associates a new vertical
structure to the company’s strip layout to yield one
of the world’s lowest on-resistance and gate
charge. It is therefore suitable for the most
demanding high efficiency converters
3
2
1
TO-220FP
3
1
D²PAK
123
I²PAK
3
2
1
TO-220
3
2
1
TO-247
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
Marking
STB25NM60N
B25NM60N
STB25NM60N-1
B25NM60N
STF25NM60N
F25NM60N
STP25NM60N
STW25NM60N
P25NM60N
W25NM60N
Package
D²PAK
I²PAK
TO-220FP
TO-220
TO-247
Packaging
Tape and reel
Tube
Tube
Tube
Tube
June 2008
Rev 12
1/18
www.st.com
18