RQK2501YGDQA_15 Datasheet, PDF (3/9 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Power Switching

RQK2501YGDQA
Main Characteristics
Maximum Channel Power
Dissipation Curve
1.0
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150
Ambient Temperature Ta (°C)
*When using the glass epoxy board (FR-4 40 x 40 x 1 mm)
Typical Output Characteristics
1.6
2.5 V
1.4
4V
7V
1.2
10 V
1.0
2.2 V
2.0 V
0.8
0.6
0.4
0.2
0
0
Pulse Test
Tc = 25°C
4
8 12
1.8 V
1.6V
1.4V
V_GS = 0V
16
20
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics (2)
0.1
V_DS = 10 V
Pulse Test
0.01
Tc = 75°C
0.001
25°C
0.0001
–25°C
0.00001
0
0.5
1
1.5
2
Gate to Source Voltage V_GS (V)
Preliminary
Maximum Safe Operation Area
10
1
0.1
0.01
Operation in this area
is limited by R_DS(on)
10 μs
DC
100
Ope¹_r⁰_a⁰_tio^1m_n^0sm1sms
μ_s
Ta = 25°C
1 Shot Pulse
0.001
1
10
100
1000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics (1)
1.6
V_DS = 10 V
1.4 Pulse Test
1.2
1.0
0.8
0.6
0.4 _{Tc = 75°C}
25°C
0.2
0
0
1
–25°C
2
3
4
Gate to Source Voltage V_GS (V)
Gate to Source Cutoff Voltage vs.
Case Temperature
2.0
1.5
I_D = 10 mA
1.0
0.5
V_DS = 10 V
Pulse Test
0
–25 0 25
1 mA
0.1 mA
50 75 100 125 150
Case Temperature Tc (°C)
R07DS0312EJ0400 Rev.4.00
Jan 10, 2014
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