RQK2501YGDQA_15 Datasheet, PDF (1/9 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Power Switching

RQK2501YGDQA
Silicon N Channel MOS FET
Power Switching
Features
• High drain to source voltage and Low gate drive
V_DSS : 250 V and 2.5 V gate drive
• Low drive current
• High speed switching
• Small traditional package (MPAK)
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
3
1
2
Preliminary Datasheet
R07DS0312EJ0400
Rev.4.00
Jan 10, 2014
3
D
2
G
S
1
1. Source
2. Gate
3. Drain
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
V_DSS
Gate to source voltage
V_GSS
Drain current
Drain peak current
I_D
I_D(pulse) ^Note1
Body - drain diode reverse drain current
Channel dissipation
I_DR
Pch ^Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 10 μs, Duty cycle ≤ 1%
2. When using the glass epoxy board (FR-4 40 × 40 × 1 mm)
Ratings
250
±10
0.4
1.6
0.4
0.8
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
R07DS0312EJ0400 Rev.4.00
Jan 10, 2014
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