RQA0011DNS_15 Datasheet, PDF (3/37 Pages) Renesas Technology Corp – Silicon N-Channel MOS FET

RQA0011DNS
Typical Transfer Characterisitics
6
V_DS = 7.5 V
5 ^{Pulse Test}
|y_fs|
4
3
I_D
2
1
0
0 0.4 0.8 1.2 1.6 2.0
Gate to Source Voltage V_GS (V)
Input Capacitance vs.
Gate to Source Voltage
140
120
100
80
60
V_DS = 0
f = 1 MHz
40
-5 -4 -3 -2 -1 0 1 2 3 4 5
Gate to Source Voltage V_GS (V)
Reverse Transfer Capacitance vs.
Drain to Gate Voltage
100
10
V_GS = 0
f = 1 MHz
1
0.1
1
10
Drain to Gate Voltage V_DG (V)
Preliminary
Forward Transfer Admittance
vs. Drain Current
10.0
V_DS = 7.5 V
Pulse Test
1.0
0.1
0.1
1.0
10.0
Drain Current I_D (A)
1000
Output Capacitance vs.
Drain to Source Voltage
100
10
0.1
V_GS = 0
f = 1 MHz
1
10
Drain to Source Voltage V_DS (V)
Maximum Stable Gain, |S21|²
vs. Drain Current
30
25
MSG
20
15
10
5
|S21|²
0
V_DS = 7.5 V
f = 520 MHz
-5
0
0.1
0.2
0.3
0.4
Drain Current I_D (A)
R07DS0095EJ0800 Rev.8.00
May 11, 2012
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