RQA0011DNS_15 Datasheet, PDF (1/37 Pages) Renesas Technology Corp – Silicon N-Channel MOS FET

RQA0011DNS
Silicon N-Channel MOS FET
Features
 High output power, High gain, High efficiency
Pout = +40.2 dBm, Linear gain = 22.5 dB, PAE = 70% (f = 520 MHz)
 Small outline package (WSON0504-2: 5.0  4.0  0.8 mm)
 Electrostatic Discharge Immunity Test
(IEC Standard, 61000-4-2, Level4)
Preliminary Datasheet
R07DS0095EJ0800
Rev.8.00
May 11, 2012
Outline
RENESAS Package code: PWSN0002ZA-B
(Package name: HWSON-2 <WSON0504-2>)
3
3
2
1
1
3
2
1. Gate
2. Source
3. Drain
1
2
Note: Marking is “RQA0011”.
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Channel dissipation
Channel temperature
Storage temperature
Note: Value at Tc = 25C
Symbol
V_DSS
V_GSS
I_D
Pch^note
Tch
Tstg
Ratings
16
±5
3.8
15
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
W
C
C
This device is sensitive to electro static discharge. An adequate careful handling procedure is requested.
R07DS0095EJ0800 Rev.8.00
May 11, 2012
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