RJP65S08DWA_15 Datasheet, PDF (3/4 Pages) Renesas Technology Corp – Inverter

RJP65S08DWA / RJP65S08DWS
Die Dimension
1.31
7.89
Gate
bonding pad
Emitter bonding pad (1)
Emitter bonding pad (2)
Emitter bonding pad (3)
Emitter bonding pad (4)
9.26
10.6
Unit: mm
Note 1.
Illustration
Part of white
Part of dotted line
Part of gray
Definition
Al pattern
Bonding area
Final passivation
Note 2. The back of the chip is processed with Au evaporation.
Note 3. Recognition, target and any other patterns which are not related to
Diode operation, may be changed without notice.
Ordering Information
Orderable Part Number
RJP65S08DWA-80#W0
RJP65S08DWS-80#W0
Shipment form
Unsawn wafer
Sawn wafer
R07DS0825EJ0400 Rev.4.00
Nov. 06, 2015
Page 3 of 3