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| RJP65S08DWA_15 Datasheet, PDF (1/4 Pages) Renesas Technology Corp – Inverter | |||
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RJP65S08DWA / RJP65S08DWS
650V - 200A - IGBT
Application: Inverter
Features
ï· Low collector to emitter saturation voltage
VCE(sat) = 1.5 V typ. (at IC = 200 A, VGE = 15 V, Tc = 25ï°C)
ï· High speed Switching
ï· Short circuit withstands time (10 ïs min.)
Outline
Datasheet
R07DS0825EJ0400
Rev.4.00
Nov. 06, 2015
2
C
1G
E
1. Gate
3
2. Collector (The back)
3. Emitter
Die: RJP65S08DWT-80
3
3
1
3
3
Wafer: RJP65S08DWA-80
2
Absolute Maximum Ratings
(Tc = 25°C unless otherwise noted)
Item
Symbol
Ratings
Unit
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Junction temperature
VCES
VGES
IC
IC
Tj
650
V
±30
V
400
A
200
A
175 Note1
ï°C
Notes: 1. Please use this device in the thermal conditions where the junction temperature does not exceed 175ï°C.
IGBT Application Note is disclosed about reliability test and application condition up to Tj = 175ï°C.
R07DS0825EJ0400 Rev.4.00
Nov. 06, 2015
Page 1 of 3
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