RJK0236DPA Datasheet, PDF (3/7 Pages) Renesas Technology Corp – Built in SBD N Channel Power MOS FET High Speed Power Switching

RJK0236DPA
Main Characteristics
Power vs. Temperature Derating
80
60
40
20
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
100
4.5 V
10 V
80
2.9 V
Pulse Test
2.8 V
60
2.7 V
40
2.6 V
20
V_GS = 2.4 V
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
80
Pulse Test
60
40
I_D = 20 A
20
10 A
5A
0
4
8
12
16 20
Gate to Source Voltage V_GS (V)
R07DS0792EJ0200 Rev.2.00
Mar 22, 2013
Preliminary
Maximum Safe Operation Area
1000
10 _μs
100
1 _ms
PW = 10 ms
10
Operation in
DC _Operation
1 ^{this area is}
limited by R_DS(on)
Tc = 25 °C
0.1 ^{1 shot Pulse}
0.1
1
10
100
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
100
V_DS = 5 V
Pulse Test
80
60
40
20
Tc = 75°C
25°C
–25°C
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
Static Drain to Source On State Resistance
vs. Drain Current
10
Pulse Test
3
V_GS = 4.5 V
1
10 V
0.3
0.1
1 3 10 30 100 300 1000
Drain Current I_D (A)
Page 3 of 6