RJK0236DPA Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Built in SBD N Channel Power MOS FET High Speed Power Switching

RJK0236DPA
25V, 50A, 1.8mΩmax.
Built in SBD N Channel Power MOS FET
High Speed Power Switching
Features
 High speed switching
 Capable of 4.5 V gate drive
 Low drive current
 High density mounting
 Low on-resistance
 Pb-free
 Halogen-free
Outline
Preliminary Datasheet
R07DS0792EJ0200
Rev.2.00
Mar 22, 2013
RENESAS Package code: PWSN0008DE-A
(Package name: WPAK(3F))
5678
5 678
D DDD
4
4321
G
1, 2, 3 Source
4
Gate
5, 6, 7, 8 Drain
S SS
1 23
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW  10 s, duty cycle  1%
2. Value at Tch = 25C, Rg  50 
3. Tc = 25C
Symbol
V_DSS
V_GSS
I_D
I_{D(pulse)Note1}
I_DR
I_AP ^{Note 2}
E_AS ^{Note 2}
Pch ^Note3
ch-c ^Note3
Tch
Tstg
Ratings
25
±20
50
200
50
23
66.1
50
2.5
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
R07DS0792EJ0200 Rev.2.00
Mar 22, 2013
Page 1 of 6