RJK0223DNS Datasheet, PDF (3/5 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching

RJK0223DNS
Preliminary
• MOS2
Item
Symbol Min
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
V_(BR)DSS
25
I_GSS
—
I_DSS
—
V_GS(off)
1.2
R_DS(on)
—
R_DS(on)
—
|y_fs|
—
Ciss
—
Output capacitance
Coss
—
Reverse transfer capacitance
Crss
—
Gate Resistance
Rg
—
Total gate charge
Qg
—
Gate to source charge
Qgs
—
Gate to drain charge
Qgd
—
Turn-on delay time
t_d(on)
—
Rise time
t_r
—
Turn-off delay time
t_d(off)
—
Fall time
t_f
—
Schottky Barrier diode forward voltage V_F
—
Body–drain diode reverse
t_rr
—
recovery time
Notes: 4. Pulse
Typ
—
—
—
—
5.4
7.8
37
1243
234
116
2.4
8.4
3.5
1.7
TBD
TBD
TBD
TBD
0.41
TBD
Max
—
±0.1
1
2.5
6.5
10.1
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
A
mA
V
m
m
S
pF
pF
pF

nC
nC
nC
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
I_D = 10 mA, V_GS = 0
V_GS = ±20 V, V_DS = 0
V_DS = 25 V, V_GS = 0
V_DS = 10 V, I _D =1 mA
I_D =8 A, V_GS = 10 V ^Note4
I_D = 8 A, V_GS = 4.5 V ^Note4
I_D = 8 A, V_DS = 5 V ^Note4
V_DS = 10 V
V_GS = 0
f = 1MHz
V_DD = 10 V
V_GS = 4.5 V
I_D = 16 A
V_GS = 10 V, I_D = 16 A
V_DD  10 V
R_L = 0.63 
R_g = 4.7 
IF = 2 A, V_GS = 0 ^Note4
IF = 16 A, V_GS = 0
di_F/ dt = 100 A/s
R07DS0126EJ0030 Rev.0.30
Sep 02, 2010
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