RJK0223DNS Datasheet, PDF (1/5 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching

Preliminary Datasheet
RJK0223DNS
Silicon N Channel Power MOS FET with Schottky Barrier Diode
High Speed Power Switching
R07DS0126EJ0030
(Previous: REJ03G1952-0020)
Rev.0.30
Sep 02, 2010
Features
 Low on-resistance
 Capable of 4.5 V gate drive
 High density mounting
 Pb-free
 Halogen-free
Outline
RENESAS Package code: PWSN0008JD-A
(Package name: HWSON3046-8 Dual)
234
D1 D1 D1
5 ⁶⁷⁸
1
8
G1
G2
4 32 1
MOS1
9
S1/D2
5678
9
S2 S2 S2
56 7
4321
(Bottom View)
MOS2 and
Schottky Barrier Diode
1, 8
Gate
2, 3, 4, 9 Drain
5, 6, 7, 9 Source
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
V_DSS
V_GSS
I_D
I_{D(pulse)Note1}
I_DR
I_AP ^{Note 2}
E_AR ^{Note 2}
Pch ^Note3
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW  10 s, duty cycle  1%
2. Value at Tch = 25C, Rg  50 
3. Tc = 25C
MOS1
25
±20
14
56
9
5
3.1
8
150
–55 to +150
Ratings
MOS2
25
±20
16
64
10
8.5
8.0
10
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C
°C
R07DS0126EJ0030 Rev.0.30
Sep 02, 2010
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