RJH60F0DPK_10 Datasheet, PDF (3/8 Pages) Renesas Technology Corp – Silicon N Channel IGBT High Speed Power Switching

RJH60F0DPK
Main Characteristics
Maximum Safe Operation Area
100
10
10 _μs
1
0.1
0.01
Ta = 25°C
1 shot
0.001
0.1
1
10
100
1000
Collector to Emitter Voltage V_CE (V)
Typical Transfer Characteristics
100
PVu_Cl_Ese=T1e0stV
TPau=lse25T°_eCst
80
60
40
Tc = 75°C
25°C
20
–25°C
0
0 2 4 6 8 10 12
Gate to Emitter Voltage V_GE (V)
Collector to Emitter Saturation Voltage
vs. Junction Temparature (Typical)
2.2
2.0
I_C = 50 A
1.8
1.6
25 A
1.4
15 A
1.2 _{VGE = 15 V}
Pulse Test
1.0
−25 0 25 50
75 100 125 150
Junction Temparature Tj (°C)
R07DS0234EJ0200 Rev.2.00
Dec 14, 2010
Preliminary
Typical Output Characteristics
100
Ta = 25°C
Pulse Test
80
13 V
15 V
60
10.5 V
11 V 10 V
9.5 V
40
9V
20
V_GE = 8.5 V
0
0
1
2
3
4
5
Collector to Emitter Voltage V_CE (V)
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
5
Ta = 25°C
Pulse Test
4
I_C = 15 A
25 A
3
50 A
2
1
6 8 10 12 14 16 18 20
Gate to Emitter Voltage V_GE (V)
Gate to Emitter Cutoff Voltage
vs. Junction Temparature (Typical)
10
8
I_C = 10 mA
6
1 mA
4
2
V_CE = 10 V
Pulse Test
0
−25 0 25 50
75 100 125 150
Junction Temparature Tj (°C)
Page 3 of 7