RJH60F0DPK_10 Datasheet, PDF (1/8 Pages) Renesas Technology Corp – Silicon N Channel IGBT High Speed Power Switching

RJH60F0DPK
Silicon N Channel IGBT
High Speed Power Switching
Preliminary Datasheet
R07DS0234EJ0200
(Previous: REJ03G1834-0100)
Rev.2.00
Dec 14, 2010
Features
 Low collector to emitter saturation voltage
V_CE(sat) = 1.4 V typ. (at I_C = 25 A, V_GE = 15 V, Ta = 25°C)
 Built in fast recovery diode in one package
 Trench gate and thin wafer technology
 High speed switching
t_f = 90 ns typ. (at I_C = 30 A, V_CC = 400 V, V_GE = 15 V, Rg = 5 , Ta = 25°C, inductive load)
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
C
4
1
23
1. Gate
2. Collector
G
3. Emitter
4. Collector (Flange)
E
Absolute Maximum Ratings
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25 °C
Tc = 100°C
Collector peak current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
2. PW  5 s, duty cycle  1%
Symbol
V_CES
V_GES
I_C ^Note1
I_C ^Note1
ic(peak) ^Note1
i_DF(peak) ^Note2
P_C
j-c
Tj
Tstg
Ratings
600
±30
50
25
100
100
201.6
0.62
150
–55 to +150
(Tc = 25°C)
Unit
V
V
A
A
A
A
W
°C/W
°C
°C
R07DS0234EJ0200 Rev.2.00
Dec 14, 2010
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