RJH30H1DPP-M0 Datasheet, PDF (3/7 Pages) Renesas Technology Corp – Silicon N Channel IGBT High speed power switching

RJH30H1DPP-M0
Main Characteristics
Maximum Safe Operation Area
1000
100
10
PW
= _{100 μs}
10 _μs
1
0.1
Ta = 25°C
1 shot pulse
0.01
0.1
1
10
100 1000
Collector to Emitter Voltage V_CE (V)
Typical Output Characteristics (2)
200
Ta = 25°C
Pulse Test
160
14 V
15 V
120
12 V
11 V
10 V
9V
8V
7V
80
6V
40
V_GE = 5 V
0
0
2
4
6
8
10
Collector to Emitter Voltage V_CE (V)
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
5
I_C = 30 A
4
60 A
90 A
3
2
1
Pulse Test
Ta = 25°C
0
0
4
8
12 16 20
Gate to Emitter Voltage V_GE (V)
R07DS0463EJ0200 Rev.2.00
Jun 15, 2011
Preliminary
Typical Output Characteristics (1)
100
Ta = 25°C
Pulse Test _{8 V}
80
9V
10 V
60
15 V
40
7.5 V
7V
6.5 V
6V
5.5 V
20
V_GE = 5 V
0
0
1
2
3
4
5
Collector to Emitter Voltage V_CE (V)
Typical Transfer Characteristics
50
V_CE = 10 V
Pulse Test
40
30
20
Tc = 75°C
25°C
10
–25°C
0
0
2
4
6
8
10
Gate to Emitter Voltage V_GE (V)
Collector to Emitter Saturation Voltage
vs. Collector Current (Typical)
10
V_GE = 15 V
Pulse Test
Tc = –25°C
1
25°C 75°C
0.1
1
10
100
Collector Current I_C (A)
Page 3 of 6