RJH30H1DPP-M0 Datasheet, PDF (2/7 Pages) Renesas Technology Corp – Silicon N Channel IGBT High speed power switching

RJH30H1DPP-M0
Electrical Characteristics
Item
Symbol Min
Zero gate voltage collector current
I_CES
—
Gate to emitter leak current
I_GES
—
Gate to emitter cutoff voltage
V_GE(off)
2.5
Collector to emitter saturation
voltage
V_CE(sat)
—
Input capacitance
Cies
—
Output capacitance
Coes
—
Reveres transfer capacitance
Cres
—
Total gate charge
Qg
—
Gate to emitter charge
Qge
—
Gate to collector charge
Qgc
—
Switching time
t_d(on)
—
t_r
—
t_d(off)
—
t_f
—
FRD Forward voltage
FRD Reverse recovery time
V_F
—
t_rr
—
Notes: 3. Pulse test
Preliminary
Typ
—
—
—
1.5
740
60
17
23
4
8
0.02
0.08
0.04
0.15
1.4
23
Max
1
±100
5
2
—
—
—
—
—
—
—
—
—
—
1.7
—
Unit
A
nA
V
V
(Tj = 25°C)
Test Conditions
V_CE = 360 V, V_GE = 0
V_GE = ± 30 V, V_CE = 0
V_CE = 10 V, I_C = 1 mA
I_C = 30A, V_GE = 15 V ^Note3
pF V_CE = 25 V
pF ^VGE ^{= 0}
pF ^{f = 1 MHz}
nC V_GE = 15 V
nC ^VCE ^{= 150 V}
nC ^{IC = 30 A}
s I_C = 30 A
s ^RL ^{= 5 }
s ^{VGE = 15 V}
s ^{RG = 5 }
V
I_F = 20 A ^Note3
ns I_F = 20 A
di_F/dt = 100 A/s
R07DS0463EJ0200 Rev.2.00
Jun 15, 2011
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