RJE0615JSP Datasheet, PDF (3/8 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Series Power Switching

RJE0615JSP
Main Characteristics
Power vs. Temperature Derating
4.0
Test condition.
When using the glass epoxy board.
(FR4 40 x 40 x 1.6 mm), (PW ≤ 10s)
3.0
2.0
1.0
0
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
−10
−10 V
−7 V
−8
−6 V
−5.5 V _{−5 V}
−4.5 V
−6
−4
V_GS = −4 V
−2
Pulse Test
0
−2 −4
−6 −8 −10
Drain to Source Voltage V_DS (V)
Drain Source Saturation Voltage vs.
Gate to Source Voltage
−1000
Pulse Test
−500
I_D = −5 A
−2 A
−1 A
−0
−2 −4 −6 −8 −10 −12 −14 −16
Gate to Source Voltage V_GS (V)
R07DS0124EJ0200 Rev.2.00
Sep 01, 2010
Preliminary
Maximum Safe Operation Area
100
Ta = 25°C
Thermal shut down operation area
10
PW
1
= _{10 ms}
0.1 _Operation
in this area
is limited R_DS(on)
0.01
−0.01 −0.1
−1
−10 −100
Drain to Source Voltage V_DS (V)
Note 7:
When using the glass epoxy board.
(FR4 40 x 40 x 1.6 mm)
Typical Transfer Characteristics
−10
−40°C
25°C
−8
V_DS = −10 V
−6 ^{Pulse Test}
Tc = 150°C
−4
Tc = 150°C
−2
25°C
−40°C
0
−2
−4
−6
−8
Gate to Source Voltage V_GS (V)
Static Drain to Source On State Resistance
vs. Drain Current
1000
500
Pulse Test
200
100
V_GS = −6 V
50
−10 V
20
10
−0.1 −0.2 −0.5 −1 −2
−5 −10
Drain Current I_D (A)
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