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R1EX24512BSAS0I_15 Datasheet, PDF (3/18 Pages) Renesas Technology Corp – Two-wire serial interface 512k EEPROM (64-kword × 8-bit) | |||
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R1EX24512BSAS0I/R1EX24512BTAS0I
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Supply voltage relative to VSS
VCC
â0.6 to +7.0
V
Input voltage relative to VSS
Operating temperature range*1
Vin
â0.3 to VCC +0.3
V
Topr
â40 to +85
°C
Storage temperature range
Tstg
â55 to +125
°C
Note: 1. Including electrical characteristics and data retention.
DC Operating Conditions
Parameter
Supply voltage
Input high voltage
Input low voltage
Operating temperature
Symbol
Min
Typ
Max
Unit
VCC
1.8
â¯
5.5
V
VSS
0
0
0
V
VIH
VCC Ã 0.7
â¯
VCC + 0.3
V
VIL
â0.3
â¯
VCC Ã 0.3
V
Topr
â40
â¯
+85
°C
DC Characteristics
(Ta = â40 to +85°C, VCC = 1.8 V to 5.5 V)
Parameter
Symbol Min Typ Max Unit
Test conditions
Input leakage current
Output leakage current
Standby VCC current
Read VCC current
Write VCC current
Output low voltage
ILI
ILO
ISB
ICC1
ICC2
VOL2
VOL1
â¯
â¯
2.0
μA VCC = 5.5 V, Vin = 0 to 5.5 V
â¯
â¯
2.0
μA VCC = 5.5 V, Vout = 0 to 5.5 V
â¯
1.0
2.0
μA VCC = 5.5 V, Vin = VSS or VCC
â¯
0.2
â¯
μA VCC = 3.3 V, Vin = VSS or VCC
â¯
â¯
1.0
mA VCC = 5.5 V, Read at 400 kHz
â¯
0.3
â¯
mA VCC = 3.3 V, Read at 400 kHz
â¯
â¯
5.0
mA VCC = 5.5 V, Write at 400 kHz
â¯
1.5
â¯
mA VCC = 3.3 V, Write at 400 kHz
â¯
â¯
0.4
V
VCC = 2.7 to 5.5 V, IOL = 3.0 mA
â¯
â¯
0.2
V
VCC = 1.8 to 2.7 V, IOL = 1.5 mA
Capacitance
(Ta = +25°C, f = 1 MHz)
Parameter
Symbol Min
Typ
Max
Unit
Test conditions
Input capacitance (A0 to A2, SCL, WP) Cin*1
â¯
Output capacitance (SDA)
CI/O*1
â¯
â¯
6.0
pF Vin = 0 V
â¯
6.0
pF Vout = 0 V
Note: 1. Not 100% tested.
Memory cell characteristics
Endurance
Data retention
Note: 1. Not 100% tested.
1,000k Cycles min.
100 Years min.
(VCC = 1.8 V to 5.5 V)
Notes 1
Notes 1
Data of shipped sample
All bits of EEPROM are logical â1â (FF Hex) at shipment.
R10DS0026EJ0500 Rev.5.00
Dec 18, 2013
Page 3 of 16
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