R1EX24512BSAS0I_15 Datasheet, PDF (17/18 Pages) Renesas Technology Corp – Two-wire serial interface 512k EEPROM (64-kword × 8-bit)

Revision History
R1EX24512BSAS0I/R1EX24512BTAS0I Data Sheet
Rev.
0.01
1.00
2.00
Date
Sep 03, 2010
Feb 15, 2012
Dec 05, 2012
3.00
Dec 13, 2012
4.00
Sep 20, 2013
5.00
Dec 18, 2013
Page
—
—
2
3
15
3
1
2
6
Description
Initial issue
Summary
"Preliminary" deleted
Addition Voltage detector in Block Diagram.
Addition DC Characteristics blow.
ISB =0.5μA (Typ)@3.3V, ICC1=0.3mA(Typ)@3.3V, ICC2=1.5mA(Typ)@3.3V
Addition Data of Shipped sample.
Addition these items for Notes.
(Power Source Noise Countermeasures)
(Device Address Input and Write Protect Input)
Delete Memory cell characteristics @ 85°C
Addition Halogen free products in Feature.
Ordering information
Addition orderable part number #K0 on SOP type and #U0 on TSSOP type.
Addition Halogen free and Inner wire item.
Addition Device Address pin description
These pins are internally pulled-down to V_SS. The device reads these pins as Low
if unconnected.
Addition Write Protect pin description
WP pin is not pulled-down inside the device, please do not use it in the floating
state.
All trademarks and registered trademarks are the property of their respective owners.
C-1