R1EX24512BSAS0G Datasheet, PDF (3/18 Pages) Renesas Technology Corp – Two-wire serial interface 512k EEPROM

R1EX24512BSAS0G/R1EX24512BTAS0G
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Supply voltage relative to V_SS
Input voltage relative to V_SS
Operating temperature range*¹
V_CC
0.6 to +7.0
V
Vin
0.3 to V_CC +0.3
V
Topr
40 to +105
C
Storage temperature range
Tstg
55 to +125
C
Note: 1. Including electrical characteristics and data retention.
DC Operating Conditions
Parameter
Supply voltage
Input high voltage
Input low voltage
Operating temperature
Symbol
Min
Typ
Max
Unit
V_CC
1.8

5.5
V
V_SS
0
0
0
V
V_IH
V_CC  0.7

V_CC + 0.3
V
V_IL
0.3

V_CC  0.3
V
Topr
40

+105
C
DC Characteristics
(Ta = 40 to +85C, V_CC = 1.8 V to 5.5 V)
Parameter
Symbol Min
Typ
Max
Unit
Test conditions
Input leakage current
I_LI


2.0
A V_CC = 5.5 V, Vin = 0 to 5.5 V
Output leakage current
I_LO


2.0
A V_CC = 5.5 V, Vout = 0 to 5.5 V
Standby V_CC current
I_SB

1.0
2.0
A V_CC = 5.5 V, Vin = V_SS or V_CC

0.2

A V_CC = 3.3 V, Vin = V_SS or V_CC
Read V_CC current
I_CC1


1.0
mA V_CC = 5.5 V, Read at 400 kHz

0.3

mA V_CC = 3.3 V, Read at 400 kHz
Write V_CC current
I_CC2


5.0
mA V_CC = 5.5 V, Write at 400 kHz

1.5

mA V_CC = 3.3 V, Write at 400 kHz
Output low voltage
V_OL2


0.4
V
V_CC = 2.7 to 5.5 V, I_OL = 3.0 mA
V_OL1


0.2
V
V_CC = 1.8 to 2.7 V, I_OL = 1.5 mA
Capacitance
(Ta = +25C, f = 1 MHz)
Parameter
Symbol Min
Typ
Max
Unit
Test conditions
Input capacitance (A0 to A2, SCL, WP) Cin*¹


6.0
pF Vin = 0 V
Output capacitance (SDA)
C_I/O*¹


6.0
pF Vout = 0 V
Note: 1. Not 100 tested.
Memory cell characteristics
Endurance
Data retention
Note: 1. Not 100 tested.
Ta=85C
1,000k Cycles min.
20 Years min.
Ta=105C
1,000k Cycles min.
20 Years min.
(V_CC = 1.8 V to 5.5 V)
Notes
1
1
Data of shipped sample
All bits of EEPROM are logical “1” (FF Hex) at shipment.
R10DS0111EJ0200 Rev.2.00
Feb. 18, 2013
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