R1EV24064ASAS0I_15 Datasheet, PDF (3/17 Pages) Renesas Technology Corp – Two-wire serial interface 64k EEPROM (8-kword  8-bit)

R1EV24064ASAS0I
Absolute Maximum Ratings
Parameter
Symbol
Supply voltage relative to V_SS
Input voltage relative to V_SS
Operating temperature range*¹
V_CC
Vin
Topr
Storage temperature range
Tstg
Notes: 1. Including electrical characteristics and data retention.
2. Vin (min): –3.0 V for pulse width  50 ns.
Value
–0.6 to +7.0
–0.5*² to +7.0
–40 to +85
–55 to +125
Preliminary
Unit
V
V
C
C
DC Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
Supply voltage
Input high voltage
Input low voltage
Operating temperature
V_CC
V_SS
V_IH
V_IL
Topr
2.5
0
V_CC  0.7
–0.3*¹
–40
—
5.5
V
0
0
V
—
V_CC + 0.5
V
—
V_CC  0.3
V
—
+85
C
Note: 1. V_IL (min): –1.0 V for pulse width  50 ns.
DC Characteristics
Parameter
Input leakage current
Output leakage current
Standby V_CC current
Read V_CC current
Write V_CC current
Output low voltage
(Ta = –40 to +85°C, V_CC = 2.5 V to 5.5 V)
Symbol Min Typ Max Unit
Test conditions
I_LI
—
—
2.0
A V_CC = 5.5 V, Vin = 0 to 5.5 V
I_LO
—
—
2.0
A V_CC = 5.5 V, Vout = 0 to 5.5 V
I_SB
—
—
2.0
A V_CC = 5.5 V, Vin = V_SS or V_CC
—
0.5
—
A V_CC = 3.3 V, Vin = V_SS or V_CC, Ta=25C
I_CC1
—
—
1.0
mA V_CC = 5.5 V, Read at 400 kHz
—
0.2
—
mA V_CC = 3.3 V, Read at 400 kHz, Ta=25C
I_CC2
—
—
3.0
mA V_CC = 5.5 V, Write at 400 kHz
—
1.5
—
mA V_CC = 3.3 V, Write at 400 kHz, Ta=25C
V_OL
—
—
0.4
V I_OL = 3.0 mA
Capacitance
(Ta = +25C, f = 1 MHz)
Parameter
Symbol Min
Typ
Max
Unit
Test conditions
Input capacitance (A0 to A2, SCL, WP) Cin*¹
—
—
6.0
pF Vin = 0 V
Output capacitance (SDA)
C_I/O*¹
—
—
6.0
pF Vout = 0 V
Note: 1. Not 100 tested.
Memory cell characteristics
Endurance
Data retention
Note: 1. Not 100 tested.
Ta=25C
1,000k Cycles min.
100 Years min.
Ta=85C
100k Cycles min
10 Years min.
Data of shipped sample
All bits of EEPROM are logical “1” (FF Hex) at shipment.
(V_CC = 2.5 V to 5.5 V)
Notes
1
1
R10DS0127EJ0100 Rev.1.00
Nov. 09, 2012
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