R1EV24002ASAS0I Datasheet, PDF (3/17 Pages) Renesas Technology Corp – Two-wire serial interface 2k EEPROM Power dissipation

R1EV24002ASAS0I
Preliminary
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Supply voltage relative to V_SS
V_CC
0.6 to +7.0
V
Input voltage relative to V_SS
Vin
0.5*² to +7.0
V
Operating temperature range*¹
Topr
40 to +85
C
Storage temperature range
Tstg
55 to +125
C
Notes: 1. Including electrical characteristics and data retention.
2. Vin (min): 3.0 V for pulse width  50 ns.
DC Operating Conditions
Parameter
Symbol
Min
Typ
Max
Supply voltage
V_CC
2.5

5.5
V_SS
0
0
0
Input high voltage
Input low voltage
V_IH
V_CC  0.7

V_CC + 0.5
V_IL
0.3*¹

V_CC  0.3
Operating temperature
Topr
40

+85
Note: 1. V_IL (min): 1.0 V for pulse width  50 ns.
Unit
V
V
V
V
C
DC Characteristics
Parameter
Input leakage current
Output leakage current
Standby V_CC current
Read V_CC current
Write V_CC current
Output low voltage
(Ta = 40 to +85C, V_CC = 2.5 V to 5.5 V)
Symbol Min Typ Max Unit
Test conditions
I_LI


2.0
A V_CC = 5.5 V, Vin = 0 to 5.5 V
I_LO


2.0
A V_CC = 5.5 V, Vout = 0 to 5.5 V
I_SB


2.0
A V_CC = 5.5 V, Vin = V_SS or V_CC
 0.5

A V_CC = 3.3 V, Vin = V_SS or V_CC, Ta=25C
I_CC1


1.0
mA V_CC = 5.5 V, Read at 400 kHz
 0.2 
mA V_CC = 3.3 V, Read at 400 kHz, Ta=25C
I_CC2


2.5
mA V_CC = 5.5 V, Write at 400 kHz
 1.0 
mA V_CC = 3.3 V, Write at 400 kHz, Ta=25C
V_OL


0.4
V I_OL = 3.0 mA
Capacitance
(Ta = +25C, f = 1 MHz)
Parameter
Symbol Min
Typ
Max
Unit
Test conditions
Input capacitance (A0 to A2, SCL, WP) Cin*¹


6.0
pF Vin = 0 V
Output capacitance (SDA)
C_I/O*¹


6.0
pF Vout = 0 V
Note: 1. Not 100 tested.
Memory cell characteristics
Endurance
Data retention
Note: 1. Not 100 tested.
Ta=25C
1,000k Cycles min.
100 Years min.
Ta=85C
100k Cycles min
10 Years min.
(V_CC = 2.5 V to 5.5 V)
Notes
1
1
Data of shipped sample
All bits of EEPROM are logical “1” (FF Hex) at shipment.
R10DS0122EJ0100 Rev.1.00
Aug. 23, 2012
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