OPA2673 Datasheet, PDF (3/40 Pages) Texas Instruments – Dual, Wideband, High Output Current Operational Amplifier with Active Off-Line Control

OPA2673
www.ti.com..................................................................................................................................................... SBOS382A – JUNE 2008 – REVISED OCTOBER 2008
ELECTRICAL CHARACTERISTICS: V_S = ±6V
At T_A = +25°C, A0 = A1 = 0 (full power), G = +4V/V, R_F = 402Ω, and R_L = 100Ω, unless otherwise noted. See Figure 76 for ac
performance only. Single channel specifications, except where noted.
PARAMETER
AC PERFORMANCE
Small-signal bandwidth
Peaking at a gain of +1
Bandwidth for 0.1dB flatness
Large-signal bandwidth
Slew rate
Rise-and-fall time
Harmonic distortion
2nd harmonic
3rd harmonic
2nd harmonic
3rd harmonic
Input voltage noise
Noninverting input current noise
Inverting input current noise
Differential gain error
Differential phase error
Channel-to-channel crosstalk (QFN-16)
DC PERFORMANCE⁽⁴⁾
Open-loop transimpedance gain (Z_OL)
Input offset voltage, full bias
Average offset drift, full bias
Input offset voltage matching, full bias
Input offset voltage, 75% bias
Input offset voltage, 50% bias
CONDITIONS
OPA2673IDGQ, IRGV
MIN/MAX OVER
TYP
TEMPERATURE
0°C to –40°C to
+25°C +25°C⁽²⁾ 70°C⁽³⁾ +85°C⁽³⁾
UNIT
MIN/ TEST
MAX LEVEL⁽¹⁾
G = +1V/V, R_F = 511Ω, V_O = 500mV_PP 600
MHz
typ
C
G = +2V/V, R_F = 475Ω, V_O = 500mV_PP 450
MHz
typ
C
G = +4V/V, R_F = 402Ω, V_O = 500mV_PP 340
270
265
260
MHz min
B
G = +8V/V, R_F = 250Ω, V_O = 500mV_PP 360
270
265
260
MHz min
B
G = +1V/V, R_F = 511Ω
2
dB
typ
C
G = +4V/V, V_O = 500mV_PP
50
MHz
typ
C
G = +4V/V, V_O = 5V_PP
300
MHz
typ
C
G = +4V/V, 5V step
3000 2600 2400 2300
V/µs
min
B
G = +4V/V, 2V step
1.2
ns
typ
C
G = +4V/V, V_O = 2V_PP, 10MHz,
R_L = 50Ω
A1 = 0, A0 = 0, full bias
–67
–61
–60
–59
dBc max
B
A1 = 0, A0 = 1, 75% bias
–70
–60
–59
–58
dBc max
B
A1 = 1, A0 = 0, 50% bias
–69
dBc
typ
C
A1 = 0, A0 = 0, full bias
–80
–73
–72
–70
dBc max
B
A1 = 0, A0 = 1, 75% bias
–75
–68
–67
–66
dBc max
B
A1 = 1, A0 = 0, 50% bias
–68
dBc
typ
C
G = +4V/V, V_O = 2V_PP, 20MHz,
R_L = 50Ω
A1 = 0, A0 = 0, full bias
-68
–62
–61
–60
dBc max
B
A1 = 0, A0 = 1, 75% bias
-67
–60
–59
–58
dBc max
B
A1 = 1, A0 = 0, 50% bias
-65
dBc
typ
C
A1 = 0, A0 = 0, full bias
-72
–63
–62
–61
dBc max
B
A1 = 0, A0 = 1, 75% bias
-66
–60
–53
–58
dBc max
B
A1 = 1, A0 = 0, 50% bias
-60
dBc
typ
C
f > 1MHz
2.4
2.8
3.2
3.6
nV/√Hz max
B
f > 1MHz
5.2
5.8
5.3
6.0
pA/√Hz max
B
f > 1MHz
35
40
42
43
pA/√Hz max
B
NTSC, R_L = 150Ω
0.03
NTSC, R_L = 37.5Ω
0.05
NTSC, R_L = 150Ω
0.01
NTSC, R_L = 37.5Ω
0.04
f = 5MHz, Input-referred
–92
%
typ
C
%
typ
C
degrees typ
C
degrees typ
C
dBc
typ
C
Differential, V_O = 0V, R_L = 100Ω
90
60
56
55
kΩ
min
A
V_CM = 0V
±2
±7
±8
±9
mV
max
A
V_CM = 0V
±25
±30
µV/°C max
B
V_CM = 0V
±0.5
±2
±2.5
±2.5
mV
max
A
V_CM = 0V
±2
±7
±8
±9
mV
max
B
V_CM = 0V
±2
±7
±8
±9
mV
max
B
(1) Test levels: (A) 100% tested at +25°C. Over temperature limits set by characterization and simulation. (B) Limits set by characterization
and simulation. (C) Typical value only for information.
(2) Junction temperature = ambient for +25°C tested specifications.
(3) Junction temperature = ambient at low temperature limit; junction temperature = ambient +18°C at high temperature limit for over
temperature specifications.
(4) Current is considered positive-out-of node. V_CM is the input common-mode voltage.
Copyright © 2008, Texas Instruments Incorporated
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