NP90N04VUK_15 Datasheet, PDF (3/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP90N04VUK
Typical Characteristics (T_A = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE
OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
T_C - Case Temperature - °C
160
140
120
100
80
60
40
20
0
0
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
25 50 75 100 125 150 175
T_C - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
ID(Pulse) = 360 A
100
RDS(ON) Limited
(VGS=10 V)
ID(DC) = 90 A
Power Dissipation Limited
10
PW _{= 100 μs}
Secondary Breakdown Limited
1
T_C = 25°C
Single Pulse
0.1
0.1
1
10
100
V_DS - Drain to Source Voltage - V
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
Rth(ch-A) = 125°C/W
10
Rth(ch-C) = 1.02°C/W
1
0.1
0.01
0.1 m
1m
10 m 100 m
1
10
PW - Pulse Width - s
Single pulse
100
1000
R07DS0577EJ0100 Rev.1.00
Nov 29, 2011
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