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HZU5.6Z Datasheet, PDF (3/6 Pages) Renesas Technology Corp – Silicon Epitaxial Planar Zener Diode for Surge Absorb
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HZU5.6Z
Main Characteristic
10-2
10-3
10-4
10-5
10-6
0
2
4
6
8
10
Zener Voltage VZ (V)
Fig.1 Zener current vs. Zener voltage
250
200
Polyimide board
20hx15wx0.8t
1.5
150
1.5
unit: mm
100
50
0
0
50
100
150
200
Ambient Temperature Ta (°C)
Fig.2 Power Dissipation vs. Ambient Temperature
104
PRSM
t
Ta = 25°C
103
nonrepetitive
102
10
1.0
10-5
10-4
10-3
10-2
10-1
1.0
Time t (s)
Fig.3 Surge Reverse Power Ratings
Rev.2.00 Jun 16, 2005 page 3 of 5
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