HZU5.6Z Datasheet, PDF (2/6 Pages) Renesas Technology Corp – Silicon Epitaxial Planar Zener Diode for Surge Absorb

HZU5.6Z
Absolute Maximum Ratings
Item
Power dissipation
Junction temperature
Storage temperature
Note: See Fig.2.
Symbol
Pd *
Tj
Tstg
Value
200
150
−55 to +150
(Ta = 25°C)
Unit
mW
°C
°C
Electrical Characteristics
Item
Symbol Min
Typ
Zener voltage
V_Z
5.31
—
Reverse current
I_R
—
—
Capacitance
C
—
8.0
Dynamic resistance r_d
—
—
ESD-Capability *
—
8

Note: Failure criterion ; I_R > 0.5 µA at V_R = 2.5 V
Max
5.92
0.5
8.5
80
—
(Ta = 25°C)
Unit
Test Condition
V
I_Z = 5 mA, 40 ms pulse
µA V_R = 2.5 V
pF V_R = 0 V, f = 1 MHz
Ω
I_Z = 5 mA
kV C = 150 pF, R = 330 Ω, Both forward
and reverse direction 10 pulse
Rev.2.00 Jun 16, 2005 page 2 of 5