HZS-N Datasheet, PDF (3/7 Pages) Renesas Technology Corp – Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply

HZS-N Series
Zener Voltage
Type
Grade
VZ (V)*¹
Min
Max
HZS7.5N B1
6.88
7.19
B2
7.11
7.41
B3
7.33
7.64
HZS8.2N B1
7.56
7.90
B2
7.82
8.15
B3
8.07
8.41
HZS9.1N B1
8.33
8.70
B2
8.61
8.99
B3
8.89
9.29
HZS10N
B1
9.19
9.59
B2
9.48
9.90
B3
9.82
10.30
HZS11N
B1
10.18
10.63
B2
10.50
10.95
B3
10.82
11.26
HZS12N
B1
11.13
11.63
B2
11.50
11.92
B3
11.80
12.30
HZS13N
B1
12.18
12.71
B2
12.59
13.16
B3
13.03
13.62
HZS15N
B1
13.48
14.09
B2
13.95
14.56
B3
14.42
15.02
HZS16N
B1
14.87
15.50
B2
15.33
15.96
B3
15.79
16.50
HZS18N
B1
16.34
17.06
B2
16.90
17.67
B3
17.51
18.30
HZS20N
B1
18.14
18.96
B2
18.80
19.68
B3
19.52
20.45
HZS22N
B1
20.23
21.08
B2
20.76
21.65
B3
21.22
22.09
B4
21.68
22.61
HZS24N
B1
22.26
23.12
B2
22.75
23.73
B3
23.29
24.27
B4
23.81
24.81
HZS27N
B1
24.26
25.52
B2
24.97
26.26
B3
25.63
26.95
B4
26.29
27.64
Note: 1. Tested with pulse (PW = 40 ms)
Test
Condition
IZ (mA)
5
Reverse Current
IR (µA)
Test
Condition
Max
VR (V)
0.5
4.0
(Ta = 25°C)
Dynamic Resistance
rd (Ω)
Test
Condition
Max
IZ (mA)
25
5
5
0.5
5.0
20
5
5
0.5
6.0
20
5
5
0.2
7.0
20
5
5
0.2
8.0
20
5
5
0.2
9.0
25
5
5
0.2
10
25
5
5
0.2
11
25
5
5
0.2
12
25
5
5
0.2
13
30
5
5
0.2
15
30
5
5
0.2
17
30
5
5
0.2
19
35
5
5
0.2
21
45
5
Rev.1.00, Mar.11.2004, page 3 of 6