HZS-N Datasheet, PDF (2/7 Pages) Renesas Technology Corp – Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply

HZS-N Series
Absolute Maximum Ratings
Item
Power dissipation
Junction temperature
Storage temperature
Symbol
Pd
Tj
Tstg
Value
400
200
−55 to +175
(Ta = 25°C)
Unit
mW
°C
°C
Electrical Characteristics
Zener Voltage
Type
Grade
VZ (V)*¹
Min
Max
HZS2.0N B1
1.88
2.10
B2
2.02
2.20
HZS2.2N B1
2.12
2.30
B2
2.22
2.41
HZS2.4N B1
2.33
2.52
B2
2.43
2.63
HZS2.7N B1
2.54
2.75
B2
2.69
2.91
HZS3.0N B1
2.85
3.07
B2
3.01
3.22
HZS3.3N B1
3.16
3.38
B2
3.32
3.53
HZS3.6N B1
3.47
3.68
B2
3.62
3.83
HZS3.9N B1
3.77
3.98
B2
3.92
4.14
HZS4.3N B1
4.05
42.6
B2
4.20
4.40
B3
4.34
4.53
HZS4.7N B1
4.47
4.65
B2
4.59
4.77
B3
4.71
4.91
HZS5.1N B1
4.85
5.03
B2
4.97
5.18
B3
5.12
5.35
HZS5.6N B1
5.29
5.52
B2
5.46
5.70
B3
5.64
5.88
HZS6.2N B1
5.81
6.06
B2
5.99
6.24
B3
6.16
6.40
HZS6.8N B1
6.32
6.59
B2
6.52
6.79
B3
6.70
6.97
Note: 1. Tested with pulse (PW = 40 ms)
Rev.1.00, Mar.11.2004, page 2 of 6
Test
Condition
IZ (mA)
5
Reverse Current
IR (µA)
Test
Condition
Max
VR (V)
120
0.5
(Ta = 25°C)
Dynamic Resistance
rd (Ω)
Test
Condition
Max
IZ (mA)
100
5
5
120
0.7
100
5
5
120
1.0
100
5
5
100
1.0
110
5
5
50
1.0
120
5
5
20
1.0
120
5
5
10
1.0
120
5
5
5
1.0
120
5
5
5
1.0
120
5
5
5
1.0
100
5
5
5
1.5
70
5
5
5
2.5
40
5
5
5
3.0
30
5
5
2
3.5
25
5